Investigation of photoluminescence in the InGaAs/GaAs system with 1100-nm range quantum dots

The results of studying the optical properties InGaAs quantum dots are presented. Single-layer with a height 5.3, 3.6 and 2.6 monolayers, as well three-stacked layers tunnel-uncoupled monolayers were formed by molecular-beam epitaxy according to Stransky--Krastanov mechanism on GaAs substrates, using partial capping annealing technique. A decrease in size makes it possible carry out blueshift photoluminescence spectrum maximum from 1200 nm 1090 nm, an increase number QD compensate for peak intensity. It is shown that this type suitable creating lasers active regions vertical microcavity neuromorphic computing. Keywords: epitaxy, gallium arsenide, InGaAs, Stranski--Krastanow mode.